Lester Eastman Conference

Technical Program

   About the LEC
   Technical Program
   Regist. Reception
   Poster Reception
   Women in Eng.
   Awards Banquet
   IQE Tours
   Call for Abstracts
   Late News
   Important Dates
   Invited Speakers
   Organizing Committee
   Past Conferences

Information for Authors

   Abstract Template
   Abstract Submission
   Paper Template
   Paper Submission


  0830 Keynote
1100 Opto 1
0830 Digital +
0830 High
  Lunch Buffet Lunch Buffet Lunch Buffet:
Closing and
  1330 Opto 2 1300 Power  
1700 Registration
and Reception
1700 Poster Session
1930 Women in Engineering
1800 Banquet
Bus departs from
conference venue


Room 101 STEPS Building


  TUESDAY, AUG 2 MORNING: Room 101 STEPS Building
Session TueAM1–Keynote Session
Chairs: Grace Xing and Siddharth Rajan
0800  Registration opens 
0830 Introduction – Grace Xing, Siddharth Rajan, James Hwang
Welcome to Lehigh – Nelson Tansu, Director, Center for Photonics and Nanoelectronics, Lehigh University
0900 Keynote: III-V Nanowire FETs on Si for RF Applications, Lars Erik Wernersson Lund University, Sweden
0945 Keynote: The New WOrld of Lighting: Solid-State Lighting and Beyond, Jeff Tsao Sandia National Laboratory 
1030 BREAK
  TUESDAY, AUG 2 MORNING: Room 101 STEPS Building
Session TueAM2:Optoelectronics I:Session Chair: Jonathan Wierer
1100 Invited: Mid-Infrared Photonic Detectors and Focal Plane Arrays Using Antimonides, Sanjay Krishna, University of New Mexico
1130 Dual-color bidirectional terahertz quantum cascade lasers based on shallow heterostructures,Sudeep Khanal, Lehigh University [STUDENT]
1145 Optimization of High-Speed CMOS Optical Modulators with Interleaved Junctions, Dinis Cheian, Massachusetts Institute of Technology [STUDENT]
1200 LUNCH BUFFET–David Radulescu - Recent Trends in US Patent Litigation


Session TuePM:Optoelectronics2
Chairs Jonathan Wierer and Sanjay Krishna
1330 Invited: High-Performance III-V Multijunction Solar Cells, John Geisz, National Renewable Energy Laboratory
1400 Invited: Chemically and Mechanically Exfoliated MoS2 for Electronic & Opto-electronic Devices, Anupama Kaul, Univeristyof Texas –El Paso
1430 Band Gap Engineering in GaN-Based Semiconductor with Dilute-Anion Incorporation for Visible Light Emitters, Chee-Keong Tan, Lehigh University [STUDENT]
1445 Room temperature CW operation of GaN-based VCSELs, Kenjo Matsui, Meijo University [STUDENT]
1500 BREAK
1530 Invited: High Al-content AlxGa1-xN Heterojunctions for Devices in the Deep Ultraviolet Part of The Spectrum, Asif Khan, University of South Carolina
1600 Graded p-AlGaN superlatticefor reduced electron overflow in tunneling injected UVC LEDs, Yuewei Zhang, The Ohio State University [STUDENT] 
1615 Polarization induced holes for ultraviolet emitting devices, Toshiki Yasuda, Meijo University[STUDENT] 
1630 Pseudomorphic LEDs on AlN Substrates Emitting at 235nm, Leo Schowalter, Crystal IS, Inc.
1930 Women in Engineering
Emeril’s Fish House, Sands Casino, 77 Sands Blvd., Bethlehem, PA 18015


POSTER SESSION: 5 PM, Tuesday Aug 2
Room102 STEPS Building
P1 A Model for Dual-Gated Monolayer MoS2 Transistor Characteristics Featuring Intrinsic and Gate-Dependent Contact Resistance, PhuocTran, International University, Vietnam
P2 Monte Carlo Modeling of Ultra-Fast Operating BDT based Logical Device, Jean-FrançoisMillithaler, UMASS LOWELL 
P3 High Frequency N-Polar GaNPlanar MIS-HEMTs on Sapphire with High Breakdown and Low Dispersion, XunZheng, University of California Santa Barbara [STUDENT]
P4 Cross sectional observation of slant field plates integrated to InAlAs/InGaAsHEMTs, TomotakaHosotani, Research Institute of Electrical Communication, Tohoku University [STUDENT]
P5 Growth and Characterization of Single Crystalline InN Grown on GaN by RF Sputtering for Robust Schottky Contacts, VacheHarotoonian, UC-Davis [STUDENT]
P6 Full-wave Hydrodynamic Modeling of Terahertz Plasma-wave HEMT Emitters, Shubhendu Bhardwaj, Electicaland Computer Engineering, The Ohio State University [STUDENT]
P7 Simulation of Power Gain at THz Frequencies Employing Grating-gate RTD-gated HEMTs, Hugo Condori, University of Utah [STUDENT]
P8 Uncertainty quantification and the role of non-parabolicityin shaping the nature of the electron transport processes within zinc oxide, Stephen O'Leary, The University of British Columbia
P9 Low Frequency Noise Characteristics of ZnO Nanowire Field Effect Transistors, Hao Xue, The Ohio State University [STUDENT] 
P10 Low Frequency Noise in Few Layer MoS2,  JunaoCheng, Ohio State University [STUDENT] 
P11 Single Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy, John Simon, NREL
P12 Integration of site-controlled InAsquantum dots in nanowire architectures towards building efficient data networks, Ayesha Jamil, COMSATS Institute of Information Technology 
P13 Electrochemical photoconversionin micro/nanostructured GaNand InN grown on silicon, Vijay Parameshwaran, U.S. Army Research Laboratory 
P14 Crystalline rare earth alloys as a solution for integrated III-V photonics on silicon, Andrew Clark, Translucent 
P15 Polarization-Dependent Optical Properties of AlGaN Nanowire Deep Ultraviolet Light-Emitting Diodes, Yu KeeOoi, Rochester Institute of Technnology[STUDENT] 
P16 Understanding the Current Injection Efficiency in Rare-Earth Doped GaN:Eu Red-Emitting Light Emitting Diodes, IoannisFragkos, Lehigh Univerisity [STUDENT]
P17 Miniband Engineering in III-Nitride Digital Alloy for Broadband Device Applications, Wei Sun, Lehigh University [STUDENT]
P18 A High Responsivity SnO2 Hollow Nanospheres Based Ultraviolet Photodetector, Prachi Sharma, Rensselaer Polytechnic Institute [STUDENT
P19 Characterization of a Molybdenum Disulfide Photodetector at Cryogenic Temperatures, GA Lara Saenz, University of Texas at El Paso [STUDENT]
P20 Relating Silicon Carbide Avalanche Breakdown Diode Design Parameters to Pulsed Energy Capability, Damian Urciuoli, U.S. Army Research Laboratory 
P21 Electrical Characterization of Atomic Layer Deposited SiO2/β-Ga2O3 Interface, Ke Zeng, Electrical Engineering Department, University at Buffalo (SUNY) [STUDENT] 
P22 Pulsed Power Evaluation and Simulation of High Voltage 4H-SiC P Type SGTOs, Aderinto Ogunniyi, U.S. Army Research Laboratory [STUDENT] 
P23 Thermal Breakdown of III-N HEMTs on different substrates, Michael Shur, Rensselaer Polytechnic Institute [STUDENT] 
P24 Asymmetric Self-Heating in AlGaN/GaNHEMTs and Its Implication on Device Reliability, Sukwon Choi, The Pennsylvania State University [STUDENT] 
P25 Determination of Al2O3/β-Ga2O3 Interface Trap Densities Dit Through Photo-Assisted C-V Method, H Zhou, Purdue University [STUDENT]



Room 101 STEPS Building
Session WedAM: Digital and Bio Electronics
Chairs: Shriram Shivaraman and James Hwang
0800  Registration opens 
0830  Invited: Negative Capacitance Transistors, Sayeef Salahuddin, UC Berkeley
0900  Invited: New Materials to Push the Limits of Moore’s Law, Tomas Palacios,
0930 Overcoming Heterogeneity, Alignment, and Contact Challenges to Realize High-Conductance Carbon Nanotube Array Field-Effect Transistors, Michael Arnold, University of Wisconsin-Madison 
0945 Experimental approach for feasibility of superlattice FET, Yasuyuki Miyamoto, Tokyo Tech
1000 BREAK
1030 Invited: Thin-Film Transistors for Flat-Panel Display Backplanes, John
Wager, Oregon State University
1100 Low-Temperature Characteristics of In0.7Ga0.3As PHEMTs, Dae-Hyun Kim, Kyungpook National University, [STUDENT] 
1115 Preliminary Results for Broadband Electrical Detection of Bacteria, X. Du, Lehigh University
1130 Solution dispersed 2D Layered Materials for in vivo Biosensing Applications, Ridwan Hossain, University of Texas El Paso [STUDENT] 


Room 101 STEPS Building
Session WedPM: Power Devices
Charis: Rongming Chu and Travis Anderson
1300 Invited: Electrical and Thermal Properties of Field-Plated Ga2O3 MOSFETs with High Breakdown Voltage, Man-Hoi Wong, National Institute of Communication Technology, Japan
1330 Invited: Diamond: an Ultra Wide Bandgap Semiconductor for Power Electronics and Energy Conversion, Robert Nemanich, Arizona State University
1400 Diamond Based Schottky PIN Diodes with Breakdown Voltage > 750V, Maitreya Datta, Arizona State University [STUDENT]
1415 Towards the High Voltage Operating Potential of βGa2O3 MOSFETs, Neil Moser, George Mason University [STUDENT]
1430 Effect of Carrier Lifetime Enhancement on the Performance of Ultra-High Voltage 4H-SiC PiN Diodes, Sauvik Chowdhury, Rensselaer Polytechnic Institute [STUDENT] 
1445 BREAK
1515 Invited: Current Status of Vertical GaN Power Devices on GaN Substrates, Tohru Oka, Toyoda Gosei, Japan
1545 Comparison between GaNtrench MOSFETs with (11𝟐̅0) a-plane and (10𝟏̅0) m-plane sidewalls, Chirag Gupta, University of California Santa Barbara[STUDENT]
1600 Experimental Realization of GaN PolarMOSH: SiC versus GaN substrates, Mingda Zhu, Cornell University [STUDENT]
1615 Heterostructure-Engineered Ohmics-based UBWG Al0.75Ga0.25N Channel MISFET,Sanyam Bajaj,The Ohio State University[STUDENT]
1630 Device Characteristics of AlN/Al0.85Ga0.15N High Electron Mobility Transistor with Regrown Ohmic Contact, Albert Baca, Sandia National Laboratories 
1645 Keynote: Anant Agarwal, US Department of Energy
1800 BANQUET: Wood Dining Room, 2nd Floor, Iacocca Hall, Mountaintop Campus, Lehigh University 



Room 101 STEPS Building
Session ThuAM: High Frequency Devices
Chairs: Keisuke Shinohara and Yasuki Miyamoto

0800 Registration opens 
0830 Invited: Demonstration of Amplifier Circuit Gain at 1THz with 25nm InP HEMT TMIC Process, Gerry Mei, Northrop Grumman 
0900 Invited: InAlGaN/GaN-HEMT Device Technologies for W-band High-Power Amplifier, Kozo Makiyama, Fujitsu
0930 Effect of Gate Sidewall Capacitance on N-Polar GaN Cap MISHEMT Performance, Steven Wienecke, University of California - Santa Barbara [STUDENT]
0945 Current Gain Above 10 in III-Nitride Tunneling Hot Electron Transistor, Zhichao Yang, The Ohio State University[STUDENT] 
1000 Towards AlN/SiC platform high performance GaNQW HEMTs, SM Islam, Cornell University
1015 First Observation of Repeatable Room Temperature Negative Differential Resistance in GaN Resonant Tunneling Diodes, Jimmy Encomendero, Cornell University[STUDENT] 
1030 BREAK
1100 Invited: The European DOTSEVEN (0.7 THz SiGe HBT) project: Technology, modeling and applications, Micheal Schroter, Technical University Dresden
1130 Plasmonic Detection of Short Terahertz Pulses, Michael Shur, Rensselaer Polytechnic Institute
1145 Low-dispersion 180° Phase Shifter Using Two Synchronized MEMS Switches, Vahid Gholizadeh, Lehigh University [STUDENT]
1200 BaSnO3 Based Transistors for High Frequency Applications, ZhanboXia, The Ohio State University [STUDENT]

Download PDF of the Technical Program HERE